IRCZ34PBF

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 30 A
Drain-Source Breakdown Voltage : 60 V
Configuration : Single Dual Source
Resistance Drain-Source RDS (on) : 0.05 Ohms


Features:






Specifications






Description

      IRCZ34PbF is a kind of power MOSFET.Here is some information about the features.The first one is about the dynamic dv/dt rating.The second is the current sense.The third one is 175 operating temperature.The fourth one is fast switching.Then is about the ease of paralleling.Next is about the simple drive requirements.What's more,it is lead-free.
     The following is about the absolute maximum ratings of the IRCZ34PbF.The maximum I_D(continuous drain current) is 30 A at T_C=25 and V_GS=10 V and 21 A at T_C=100 and V_GS=10 V.The maximum I_DM (Pulsed drain current)  is 120 A.The maximum V_GS (gate-to-source voltage) is ±20 V.The maximum P_D (power dissipation) is 88 W at T_C=25.The T_J and T_STG (operating junction and storage temperature range) are both from -55 to +175.The soldering temperature for 10 seconds is 300.The maximum dv/dt (peak diode recovery dv/dt) is 4.5 V/ns.The maximum linear derating factor is 0.59 W/.Then is about the thermal resistance.The maximum R_JC (Junction-to-Case) is 1.7/W.The maximum R_JA (Junction-to-Ambient (PCB mounted,steady-state)) is 62/W.The typical R_CS (Case-to-Sink,flat,greased surface) is 0.5/W.
      What comes next is about electrical characteristics of the IRCZ34PbF at T_J=25.The minimum V_(BR)DSS (drain-to-source breakdown voltage) is 60 V at V_GS=0 V,I_D=250A.The typical V_(BR)DSS/T_J (breakdown voltage temperature coefficient) is 0.065 V/ at T_J=25 and ID=1mA.The maximum R_DS(on) (static drain-to-source on resistance) is 0.05 at V_GS=10 V,I_D=18A.The V_GS(th) (gate threshold voltage) is 2.0 V and the maximum is 4.0 V at VDS=VGS,ID=250A.The maximum IDSS (drain-to-source leakage current) is 25A at V_DS=60 V,V_GS=0 V and is 250A at V_DS=48 V,V_GS=0 V,T_J=150.The maximum (I_GSS) (gate-to-source forward leakage) is 100 nA at V_GS=20 V and the maximum (I_GSS) (gate-to-source reverse leakage) is -100 nA at V_GS=-20 V.