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Part Number: IRF1010E

 

MFG: IR

 

 

Description: Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing technique...


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IRF1010E General Description


Advanced HEXFET  Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

IRF1010E Maximum Ratings

  Parameter Max. Units
ID @ TC =25 Continuous Drain Current,VGS @ 10V 84 A
ID @ TC =100 Continuous Drain Current,VGS @ 10V 59
IDM Pulsed Drain Current 330
PD @ TC =25 Power Dissipation 200 W
  Linear Derating Factor 1.4 W/
VGS Gate-to-Source Voltage ±20 V
IAR Avalanche Current 50 A
EAR Repetitive Avalanche Energy 17 mJ
dv/dt Peak Diode Recovery dv/dt 4.0 V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case)
  Mounting Torque, 6-32 or M3 screw 10 lbf.in (1.1 N.m)  

IRF1010E Features

`Advanced Process Technology
`Ultra Low On-Resistance
`Dynamic dv/dt Rating
`175 Operating Temperatur
`Fast Switching
`Fully Avalanche Rated

IRF1010E datasheet

IRF1010E
PDF/DataSheet Download

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