IRF1010EPBF

MOSFET MOSFT 60V 81A 12mOhm 86.6nC

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SeekIC No. : 00148257 Detail

IRF1010EPBF: MOSFET MOSFT 60V 81A 12mOhm 86.6nC

floor Price/Ceiling Price

US $ .68~.84 / Piece | Get Latest Price
Part Number:
IRF1010EPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.84
  • $.75
  • $.72
  • $.68
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 81 A
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 81 A
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 60 V


Features:

` Advanced Process Technology
` Ultra Low On-Resistance
` Dynamic dv/dt Rating
` 175 Operating Temperature
` Fast Switching
` Fully Avalanche Rated
` Lead-Free



Specifications

  Parameter Max. Units
ID @ TC = 25

ID @ TC = 100

IDM
Continuous Drain Current, VGS @ 10V

Continuous Drain Current, VGS @ 10V

Pulsed Drain Current
84

59

330
A
PD @TC = 25

Power Dissipation
200

W
  Linear Derating Factor 1.4 W/
VGS

Gate-to-Source Voltage
± 20

V

IAR
EAR
Avalanche Current

Repetitive Avalanche Energy
50

17
A

mJ
dv/dt

TJ

TSTG


Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

4.0

-55 to + 175



300 (1.6mm from case )
V/ns






  Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)  



Description

Advanced HEXFET® Power MOSFETs of the IRF1010EPbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package of the IRF1010EPbF is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.




Parameters:

Technical/Catalog InformationIRF1010EPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C84A
Rds On (Max) @ Id, Vgs12 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds 3210pF @ 25V
Power - Max200W
PackagingBulk
Gate Charge (Qg) @ Vgs130nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF1010EPBF
IRF1010EPBF



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