IRF1010EZLPBF

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 84 A
Drain-Source Breakdown Voltage : 60 V
Package / Case : TO-262


Features:

`Advanced Process Technology
`Ultra Low On-Resistance
`Dynamic dv/dt Rating
`175 Operating Temperature
`Fast Switching
`Repetitive Avalanche Allowed up to Tjmax
`Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V (Silicon Limited)	84	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V (See Fig. 9)	60
ID @ TC = 25	Continuous Drain Current, VGS @ 10V (Package Limited)	75
IDM	Pulsed Drain Current	340
ID @ TC = 25	Maximum Power Dissipation	140	A
	Linear Derating Factor	0.90	W/
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy (Thermally Limited)	99	mJ
EAS (Tested )	Single Pulse Avalanche Energy Tested Value	180
IAR	Avalanche Current	See Fig.12a, 12b, 15, 16	A
EAR	Repetitive Avalanche Energy		mJ
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting Torque, 6-32 or M3 screw	10 lbfin (1.1Nm)

Description

Specifically designed for Automotive applications of the IRF1010EZLPbF, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature of the IRF1010EZLPbF, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.