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Part Number: IRF1010EZSPbF

 

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Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest p...


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IRF1010EZSPbF General Description


Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

IRF1010EZSPbF Maximum Ratings

  Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Silicon Limited) 84 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V (See Fig. 9) 60
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Package Limited) 75
IDM Pulsed Drain Current 340
ID @ TC = 25 Maximum Power Dissipation 140 A
  Linear Derating Factor 0.90 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) 99 mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value 180
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy mJ
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting Torque, 6-32 or M3 screw 10 lbfin (1.1Nm)  

IRF1010EZSPbF Features

`Advanced Process Technology
`Ultra Low On-Resistance
`Dynamic dv/dt Rating
`175 Operating Temperature
`Fast Switching
`Repetitive Avalanche Allowed up to Tjmax
`Lead-Free

IRF1010EZSPbF datasheet

IRF1010EZSPBF
PDF/DataSheet Download

  • Datasheet: IRF1010EZSPBF
  • File Size: 292166 KB
  • Manufacturer: IRF [International Rectifier]
  • Click here to Download

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