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MFG:IR  Package Cooled:TO-220  D/C:09+  

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Part Number: IRF1010N

 

MFG: IR

Package Cooled: TO-220

D/C: 09+

Description: Power MOSFETs from International Advanced HEXFET Rectifier utilize advanced processing techniques to a...


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IRF1010N General Description


Power MOSFETs from International Advanced HEXFET Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

IRF1010N Maximum Ratings

  Parameter Max. Units
ID @ TC =25 Continuous Drain Current,VGS @ 10V 85 A
ID @ TC =100 Continuous Drain Current,VGS @ 10V 60
IDM Pulsed Drain Current 290
PD @ TC =25 Power Dissipation 180 W
  Linear Derating Factor 1.2 W/
VGS Gate-to-Source Voltage ±20 V
IAR Avalanche Current 43 A
EAR Repetitive Avalanche Energy 18 mJ
dv/dt Peak Diode Recovery dv/dt 3.6 V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case)
  Mounting Torque, 6-32 or screw 10 lbf.in (1.1 N.m)  

IRF1010N Features

`Advanced Process Technology
`Ultra Low On-Resistance
`Dynamic dv/dt Rating
`175 Operating Temperatur
`Fast Switching
`Fully Avalanche Rated

IRF1010N datasheet

IRF1010N
PDF/DataSheet Download

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