MFG:TO-262 Package Cooled:7850 D/C:IR
MFG: TO-262
Package Cooled: 7850
D/C: IR
Description: Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing technique...
Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF1010NL) is available for low- profile applications.
| Parameter | Max. | Units | |
| ID @ TC =25 | Continuous Drain Current,VGS @ 10V | 85 | A |
| ID @ TC =100 | Continuous Drain Current,VGS @ 10V | 60 | |
| IDM | Pulsed Drain Current | 290 | |
| PD @ TC =25 | Power Dissipation | 180 | W |
| Linear Derating Factor | 1.2 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| IAR | Avalanche Current | 43 | A |
| EAR | Repetitive Avalanche Energy | 18 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 3.6 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case) | ||
| Mounting Torque, 6-32 or M3 screw | 10 lbf.in (1.1 N.m) |
IRF1010NL
PDF/DataSheet Download
Power MOSFETs of the IRF1010Nfrom International Advanced HEXFET Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that H...
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