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Part Number: IRF1010NPbF

 

 

 

 

Description: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques...


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IRF1010NPbF General Description


Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

IRF1010NPbF Maximum Ratings

Parameter Symbol Rating Unit
Continuous Drain Current, VGS @ -10V,Tc = 25 ID 85 A
Continuous Drain Current, VGS @ -10V,Tc = 100 ID 60 A
Pulsed Drain Current*1 IDM 290 A
Power Dissipation Tc = 25 PD 180 W
Linear Derating Factor   1.2 /W
Gate-to-Source Voltage VGS ±20 V
Avalanche Current *1 IAR 43 A
Repetitive Avalanche Energy EAR 18 mJ
Peak Diode Recovery dv/dt *2 dv/dt 3.6 V/ns
Operating Junction and Storage Temperature Range TJ,TSTG -55 to + 175
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf.in (1.1N.m)  

IRF1010NPbF Features

· Advanced Process Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated
· Lead-Free

IRF1010NPbF datasheet

IRF034
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