Position: Home > Datasheet list > IRF Series > Index I > IRF1010Z
Electronica China

Purchase IRF1010Z, In-stock IRF1010Z From SeekIC.

MFG:TO-220AB  Package Cooled:7850  D/C:IR  

IRF1010Z Product Image

IRF Series Datasheet download

Five Points

Part Number: IRF1010Z

 

MFG: TO-220AB

Package Cooled: 7850

D/C: IR

Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest p...


Urgent Purchase

IRF1010Z General Description


Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

IRF1010Z Maximum Ratings

  Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Silicon Limited) 94 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V 66
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Package Limited) 75
IDM Pulsed Drain Current 360
ID @ TC = 25 Power Dissipation 140 A
  Linear Derating Factor 0.90 W/
VGS Gate-to-Source Voltage ±20 V
EAS(Thermally limited) Single Pulse Avalanche Energy (Thermally Limited) 130 mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value 180
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy mJ
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting Torque, 6-32 or M3 screw 10 lbfin (1.1Nm)  

IRF1010Z Features

`Advanced Process Technology
`Ultra Low On-Resistance
`175 Operating Temperature
`Fast Switching
`Repetitive Avalanche Allowed up to Tjmax

IRF1010Z datasheet

IRF1010Z
PDF/DataSheet Download

Find IRF1010Z Suppliers

  • ·IRF034
  • IRF [International Rectifier] 
  • REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) 
  • 147521 KB
  • IRF034 Datasheet Download
  • ·IRF044
  • SEME-LAB [Seme LAB] 
  • N-CHANNEL POWER MOSFET 
  • 22513 KB
  • IRF044 Datasheet Download
  • ·IRF044SMD
  • SEME-LAB [Seme LAB] 
  • N-CHANNEL POWER MOSFET 
  • 21905 KB
  • IRF044SMD Datasheet Download
  • ·IRF054
  • IRF [International Rectifier] 
  • REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) 
  • 149688 KB
  • IRF054 Datasheet Download
  • ·IRF054SMD
  • SEME-LAB [Seme LAB] 
  • N-CHANNEL POWER MOSFET 
  • 23141 KB
  • IRF054SMD Datasheet Download
  • ·IRF100
  • ETC [ETC] 
  • 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED 
  • 86902 KB
  • IRF100 Datasheet Download
  • ·IRF101
  • FAIRCHILD [Fairchild Semiconductor] 
  • N-Channel Power MOSFETs, 27 A, 60-100V 
  • 149859 KB
  • IRF101 Datasheet Download
  • ·IRF1010E
  • IRF [International Rectifier] 
  • Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A 
  • 200209 KB
  • IRF1010E Datasheet Download

Related Part Number

IRF1010Z Relative Products

  • IRF1010NSTRRPBF

    IRF1010NSTRRPBF

    MOSFET N-CH 55V 85A D2PAK

  • IRF1010NSTRR

    IRF1010NSTRR

    MOSFET N-CH 55V 85A D2PAK

  • IRF1010NSTRLPBF

    IRF1010NSTRLPBF

    MOSFET N-CH 55V 85A D2PAK

  • IRF1010NSTRL

    IRF1010NSTRL

    MOSFET N-CH 55V 85A D2PAK

  • IRF1010NSPbF

    IRF1010NSPbF

    Advanced HEXFET® Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power ...

  • IRF1010NS

    IRF1010NS

    Advanced HEXFET Power MOSFETs of the IRF1010NSfrom International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that ...

Hotspot Suppliers Product

Product List

  • Models: PCA9535DGVR Price: 1.5-1.8 USD

    PCA9535DGVR

    Price: 1.5-1.8 USD

    IC I/O EXPANDER I2C 16B 24TVSOP - PCA9535DGVR

  • Models: DAC7725UB/1K Price: 13.02-14.28 USD

    DAC7725UB/1K

    Price: 13.02-14.28 USD

    12-bit, quad voltage output, digital-to-analog converter, 28-SOIC, RoHS Non-Compliant

  • Models: RTD2120L Price: 1.64-2.19 USD

    RTD2120L

    Price: 1.64-2.19 USD

    micro-processor, LCD monitor, -1 to 4.6V, embedded 1.8V regulator, Code protection

  • Models: CA3130T Price: 1-10 USD

    CA3130T

    Price: 1-10 USD

    CA3130T - 15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output - Intersil Corporation

  • Models: K6X1008C2D-DB70000 Price: 2.2-2.7 USD

    K6X1008C2D-DB70000

    Price: 2.2-2.7 USD

    DIP32, 128Kx8 bit, Low Power, CMOS Static RAM, Low Data Retention Voltage, Three state output

  • Models: TPS2419D Price: 1.5-4.5 USD

    TPS2419D

    Price: 1.5-4.5 USD

    controller, 3 V to 16.5 V, SOIC-8

  • Models: AF82801IBM Price: 5-8 USD

    AF82801IBM

    Price: 5-8 USD

    AF82801IBM, BGA, Intel Corporation, Integrated Circuits, I/O Controller, 31mm x 31mm

  • Models: 4R3TI60Y-080 Price: 13.8-22 USD

    4R3TI60Y-080

    Price: 13.8-22 USD

    diode and tyristor module, class passivation chip, easy connection, insulated type, 800V

  • Models: AT45DB642D-TU Price: 6-6.5 USD

    AT45DB642D-TU

    Price: 6-6.5 USD

    64-megabit, 2.7-volt, Dual-interface, Flash memory, 28T- TSOP

  • Models: STU407DH Price: 0.47-0.63 USD

    STU407DH

    Price: 0.47-0.63 USD

    field effect transistor, dual Enhancement mode, 40V, 50A, N and P channel

  • Models: HFBR-4513Z Price: 1-5 USD

    HFBR-4513Z

    Price: 1-5 USD

    plastic fiber optic cables, single step-index fiber, black polyethylene jacket

  • Models: TLP541G Price: 0.13-0.15 USD

    TLP541G

    Price: 0.13-0.15 USD

    Photocoupler, DIP8, 400V

Map list:   ABCDEFGHIJKLMNOPQRSTUVWXYZ    0123456789All