MFG:TO-262 Package Cooled:7850 D/C:IR
MFG: TO-262
Package Cooled: 7850
D/C: IR
Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest p...
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
| Parameter | Max. | Units | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 94 | A |
| ID @ TC = 100 | Continuous Drain Current, VGS @ 10V | 66 | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Package Limited) | 75 | |
| IDM | Pulsed Drain Current | 360 | |
| ID @ TC = 25 | Power Dissipation | 140 | A |
| Linear Derating Factor | 0.90 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS(Thermally limited) | Single Pulse Avalanche Energy (Thermally Limited) | 130 | mJ |
| EAS (Tested ) | Single Pulse Avalanche Energy Tested Value | 180 | |
| IAR | Avalanche Current | See Fig.12a, 12b, 15, 16 | A |
| EAR | Repetitive Avalanche Energy | mJ | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting Torque, 6-32 or M3 screw | 10 lbfin (1.1Nm) |
IRF1010ZL
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Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design of the IRF1010Zare a 175°C junction operatin...
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