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Part Number: IRF1010ZLPbF

 

 

 

 

Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest p...


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IRF1010ZLPbF General Description


Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

IRF1010ZLPbF Maximum Ratings

  Parameter
Max.
Units
ID @TC = 25
 Continuous Drain Current, VGS @ 10V (Silicon Limited)
94
A
ID @,TC = 100
 Continuous Drain Current, VGS @ 10V
66
ID @ TC = 25
 Continuous Drain Current, VGS @ 10V (Package Limited)
75
IDM
 Pulsed Drain Current
360
PD @TC = 25
 Power Dissipation
140
W
 Linear Derating Factor
0.90
W/
VGS
 Gate-to-Source Voltage
± 20
V
EAS (Thermally limited)
 Single Pulse Avalanche Energy
130
mJ
EAS (Tested )
 Single Pulse Avalanche Energy Tested Value
180
IAR
 Avalanche Current􀀀
See Fig.12a, 12b, 15, 16
A
EAR
 Repetitive Avalanche Energy
mJ
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
  Mounting Torque, 6-32 or M3 screw
10 lbfin (1.1Nm)

IRF1010ZLPbF Features

Advanced Process Technology
Ultra Low On-Resistance
175 Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
 Lead-Free

IRF1010ZLPbF datasheet

IRF034
PDF/DataSheet Download

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