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IRF1302L

Features: `Advanced Process Technology`Ultra Low On-Resistance`Dynamic dv/dt Rating`175 Operating Temperatur`Fast Switching`Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ID @ TC =25 Continuous Drain Current,VGS @ 10V 174 A ID @ TC =100 Continuous Dr...

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SeekIC No. : 004376364 Detail

IRF1302L: Features: `Advanced Process Technology`Ultra Low On-Resistance`Dynamic dv/dt Rating`175 Operating Temperatur`Fast Switching`Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter M...

IRF1302L Data Sheet

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Part Number:
IRF1302L
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

`Advanced Process Technology
`Ultra Low On-Resistance
`Dynamic dv/dt Rating
`175 Operating Temperatur
`Fast Switching
`Repetitive Avalanche Allowed up to Tjmax


Specifications

  Parameter Max. Units
ID @ TC =25 Continuous Drain Current,VGS @ 10V 174 A
ID @ TC =100 Continuous Drain Current,VGS @ 10V 120
IDM Pulsed Drain Current 700
PD @ TC =25 Power Dissipation 200 W
  Linear Derating Factor 1.4 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 350 mJ
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy mJ
dv/dt Peak Diode Recovery dv/dt TBD V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case)



Description

Specifically designed for Automotive applications of the IRF1302L, this Stripe Planar  design of HEXFET Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 junction operatin temperature, fast switching speed and improved repetitive avalanche rating. These benefits of the IRF1302L combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




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