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IRF1310N

MOSFET N-CH 100V 42A TO-220AB

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SeekIC No. : 004376367 Detail

IRF1310N: MOSFET N-CH 100V 42A TO-220AB

IRF1310N Data Sheet

floor Price/Ceiling Price

US $ 1.11~1.11 / Piece | Get Latest Price
Part Number:
IRF1310N
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~250
  • Unit Price
  • $1.11
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Description



Features:

`Advanced Process Technology
`Dynamic dv/dt Rating
`175 Operating Temperatur
`Fast Switching
`Fully Avalanche Rated




Specifications

Parameter Max. Units
ID @ TC =25 Continuous Drain Current,VGS @ 10V 42 A
ID @ TC =100 Continuous Drain Current,VGS @ 10V 30
IDM Pulsed Drain Current 140
PD @ TC =25 Power Dissipation 160 W
Linear Derating Factor 1.1 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 420 mJ
IAR Avalanche Current 22 A
EAR Repetitive Avalanche Energy 16 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or screw 10 lbf.in (1.1 N.m)





Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device of the IRF1310N for use in a wide variety of applications.

The IRF1310N package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout theindustry.






Parameters:

Technical/Catalog InformationIRF1310N
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C42A
Rds On (Max) @ Id, Vgs36 mOhm @ 22A, 10V
Input Capacitance (Ciss) @ Vds 1900pF @ 25V
Power - Max160W
PackagingBulk
Gate Charge (Qg) @ Vgs110nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRF1310N
IRF1310N



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