IRF1405ZLPBF

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-262
Continuous Drain Current : 150 A


Features:

 Advanced Process Technology
Ultra Low On-Resistance
175Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V (Silicon Limited)	150	A
ID @ TC =100	Continuous Drain Current, VGS @ 10V	110
ID @ TC = 25	Continuous Drain Current,VGS @ 10V (Package Limited)	75
IDM	Pulsed Drain Current	600
PD @TC= 25	Power Dissipation	230	W
	Linear Derating Factor	1.5	W/
VGS	Gate-to-Source Voltage	± 20	V
EAS (Thermally limited)	Single Pulse Avalanche Energy	270	mJ
EAS (Tested )	Single Pulse Avalanche Energy Tested Value	420
IAR	Avalanche Current	See Fig.12a, 12b, 15, 16	A
EAR	Repetitive Avalanche Energy		mJ
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Reflow Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting Torque, 6-32 or M3 screw	10 lbf`in (1.1N`m)

Description

Specifically designed for Automotive applications, this HEXFET^® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 junction operating temperature of the IRF1405ZLPbF, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Parameters:

Technical/Catalog Information	IRF1405ZLPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	4.9 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds	4780pF @ 25V
Power - Max	230W
Packaging	Tube
Gate Charge (Qg) @ Vgs	180nC @ 10V
Package / Case	TO-262-3 (Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF1405ZLPBF IRF1405ZLPBF