MFG:IR Package Cooled:04+ D/C:220
MFG: IR
Package Cooled: 04+
D/C: 220
Description: Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes t...
Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
| Parameter | Max. | Units | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 240 | A |
| ID @ TC = 100 | Continuous Drain Current, VGS @ 10V (See Fig. 9) | 170 | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Package Limited) | 75 | |
| IDM | Pulsed Drain Current | 960 | |
| ID @ TC = 25 | Power Dissipation | 330 | A |
| Linear Derating Factor | 2.2 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 510 | mJ |
| EAS (Tested ) | Single Pulse Avalanche Energy Tested Value | 980 | |
| IAR | Avalanche Current | See Fig.12a, 12b, 15, 16 | A |
| EAR | Repetitive Avalanche Energy | mJ | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
IRF1503
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