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MFG:IR  Package Cooled:TO-262  D/C:5000  

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Part Number: IRF1503L

 

MFG: IR

Package Cooled: TO-262

D/C: 5000

Description: Specifically designed for Automotive applications, this Stripe Planar design of HEXFET®...


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IRF1503L General Description


Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

IRF1503L Maximum Ratings

  Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V(Silicon limited) 190 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V(See Fig.9) 130
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Package limited) 75
IDM Pulsed Drain Current 960
PD @ TC = 25 Power Dissipation 200 W
  Linear Derating Factor 1.3 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 510 mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value 980
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy mJ
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to 175
  Soldering Temperature, for 10 seconds 300 (1.6 mm from case)
  Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)  
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
 Starting TJ = 25, L = 0.049mH RG = 25, IAS = 140A. (See Figure 12).
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.

IRF1503L Typical Application

14V Automotive Electrical Systems
14V Electronic Power Steering

IRF1503L datasheet

IRF034
PDF/DataSheet Download

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