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Part Number: IRF1503PbF

 

 

 

 

Description: Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes t...


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IRF1503PbF General Description


Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

IRF1503PbF Maximum Ratings

  Parameter Max. V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon limited) 240 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig.9) 170
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package limited) 75
IDM Pulsed Drain Current 960
PD @TC = 25°C Linear Derating Factor 330 W
  Linear Derating Factor 2.2 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 510 mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value 980
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy mJ
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )

IRF1503PbF Features

􀁏· Advanced Process Technology
􀁏· Ultra Low On-Resistance
􀁏· 175°C Operating Temperature
􀁏· Fast Switching
􀁏· Repetitive Avalanche Allowed up to Tjmax

IRF1503PbF Typical Application

􀁏· 14V Automotive Electrical Systems
􀁏· 14V Electronic Power Steering
􀁏· Lead-Free

IRF1503PbF datasheet

IRF034
PDF/DataSheet Download

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