IRF1503PBF

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : 20 V
Resistance Drain-Source RDS (on) : 3.3 m Ohms
Continuous Drain Current : 240 A


Features:

􀁏· Advanced Process Technology
􀁏· Ultra Low On-Resistance
􀁏· 175°C Operating Temperature
􀁏· Fast Switching
􀁏· Repetitive Avalanche Allowed up to Tjmax


Application

􀁏· 14V Automotive Electrical Systems
􀁏· 14V Electronic Power Steering
􀁏· Lead-Free


Specifications

	Parameter	Max.	V
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V (Silicon limited)	240	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V (See Fig.9)	170
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V (Package limited)	75
IDM	Pulsed Drain Current	960
PD @TC = 25°C	Linear Derating Factor	330	W
	Linear Derating Factor	2.2	W/°C
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy	510	mJ
EAS (tested)	Single Pulse Avalanche Energy Tested Value	980
IAR	Avalanche Current	See Fig.12a, 12b, 15, 16	A
EAR	Repetitive Avalanche Energy		mJ
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )

Description

Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this HEXFET power MOSFET of the IRF1503PbF are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.