MFG:IR Package Cooled:D2-PAK D/C:09+
MFG: IR
Package Cooled: D2-PAK
D/C: 09+
Description: Specifically designed for Automotive applications, this Stripe Planar design of HEXFET®...
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
| Parameter | Max. | Units | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V(Silicon limited) | 190 | A |
| ID @ TC = 100 | Continuous Drain Current, VGS @ 10V(See Fig.9) | 130 | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Package limited) | 75 | |
| IDM | Pulsed Drain Current | 960 | |
| PD @ TC = 25 | Power Dissipation | 200 | W |
| Linear Derating Factor | 1.3 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 510 | mJ |
| EAS (tested) | Single Pulse Avalanche Energy Tested Value | 980 | |
| IAR | Avalanche Current | See Fig.12a, 12b, 15, 16 | A |
| EAR | Repetitive Avalanche Energy | mJ | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6 mm from case) | ||
| Mounting Torque, 6-32 or M3 screw | 10 lbf•in (1.1N•m) |
IRF034
PDF/DataSheet Download
Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this HEXFET power MOSFET of the IRF1503PbFar...
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.Additional features of this HEXFET power MOSFET are a...
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are ...
Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junctio...
Price: 17.5-18.5 USD
PLCC-84, second generation, CHMOS, High-Integration, microprocessor, 20 MHz, 64 Kbyte
Price: 1-1.2 USD
IC DAC 16BIT SER 20-VQFN - PCM1774RGPR
Price: 0.1-50 USD
CMOS, DIP20, 8-Bit, Microprocessor-Compatible, 6.5V, A/D Converter
Price: 2-3 USD
128K X 8 ELECTRICALLY ERASABLE EPROM
Price: 1-3 USD
16 Mbit, 3.0 Volt-only Flash memory, 48-ball Fine-pitch BGA (0.8 mm pitch), 64-ball Fortified BGA ...
Price: 5-10 USD
SF-C20, Laser lens, Sanyo Semicon Device, Optoelectronics
Price: 1.7-3.6 USD
MOSFET, N-CH, 500V, 12A, TO220FP, 0.3W, 0.30Ω, High dv/dt, avalanche capabilitues
Price: 35-37 USD
N10P-GE1, BGA, NVIDIA Corporation
Price: 8-15 USD
Dual-Port Static RAM, QFP, high-speed, -0.5 to +7.0 V, 50 mA
Price: 0.1-1 USD
KA1M0565R-TU, Fairchild Power Switch(FPS), Fairchild Semiconductor, 650V, 230 mJ, TO-220
Price: 15-60 USD
Lattice Semiconductor, LCMX0640C3TN144C, SOP, Integrated Circuits
Price: 2-5 USD
STRD6801, ZSIP5, Sanken electric, Integrated Circuits
