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Part Number: IRF1503SPbF

 

 

 

 

Description: Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSF...


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IRF1503SPbF General Description


Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.Additional features of this HEXFET power MOSFET are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

IRF1503SPbF Maximum Ratings

 
Parameter
Max.
Units
ID @ TC=25 Continuous Drain Current,VGS @ 10V(Silicon limited)
190
A
ID @TC=100 Continuous Drain Current,VGS @ 10V(See Fig.9)
130
ID @ TC=25 Continuous Drain Current,VGS @ 10V(Package limited)
75
IDM Pulsed Drain Current
960
PD @TC=25 Power Dissipation
200
W
  Linear Derating Factor
1.3
W/
VGS Gate-to-Source Voltage
± 20
V
EAS Single Pulse Avalanche Energy
510
mJ
EAS(tested) Single Pulse Avalanche Energy Tested Value
980
IAR Avalanche Current
See Fig.12a, 12b, 15, 16
A
EAR Repetitive Avalanche Energy
mJ
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 175
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )
  Mounting Torque, 6-32 or M3 screw
10 lbf`in (1.1N`m)

IRF1503SPbF Typical Application

· 14V Automotive Electrical Systems
· 14V Electronic Power Steering
· Lead-Free

IRF1503SPbF datasheet

IRF034
PDF/DataSheet Download

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