Purchase IRF150SMD, In-stock IRF150SMD From SeekIC.
- Table of contents:
IRF150SMD
-
Suppliers
DataSheet
General Description
IRF150SMD Maximum Ratings
| VGS | Gate - Source Voltag | ±20 |
| ID | Continuous Drain Current(VGS = 0 , Tcase = 25 |
27A |
| ID | Continuous Drain Current(VGS = 0 , Tcase = 100 | 19A |
| IDM | PulsedDrain Current 1 | 108A |
| PD | Power Dissipation @ Tcase = 25 |
100W |
| Linear Derating Factor | 0.8W/ | |
| EAS | Single Pulse Avalanche Energy 2 | 150mJ |
| dv/dt | Peak Diode Recovery 3 | 5.5V/ns |
| TJ , Tstg | Operating and Storage Temperature Range | -55 to 150 |
| TL | Package Mounting Surface Temperature (for5 sec) | 300 |
| RJC | Thermal Resistance Junction to Case | 1.25/W |
| RJ-PCB | Thermal Resistance Junction to PCB (Typical) | 3/W |
IRF150SMD Features
• HERMETICALLY SEALED SURFACE MOUNT PACKAGE
• SMALL FOOTPRINT EFFICIENT USE OF PCB SPACE.
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• HIGH PACKING DENSITIES
• SMALL FOOTPRINT EFFICIENT USE OF PCB SPACE.
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• HIGH PACKING DENSITIES
IRF150SMD
PDF/DataSheet Download
- Datasheet: IRF150SMD
- File Size: 23172 KB
- Manufacturer: SEME-LAB [Seme LAB]
- Click here to Download
- ·IRF034
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 147521 KB
- ·IRF044
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 22513 KB
- ·IRF044SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 21905 KB
- ·IRF054
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 149688 KB
- ·IRF054SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 23141 KB
- ·IRF100
- ETC [ETC]
- 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
- 86902 KB
- ·IRF101
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Power MOSFETs, 27 A, 60-100V
- 149859 KB
- ·IRF1010E
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A
- 200209 KB
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