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MFG:IR  Package Cooled:TO-220  D/C:06+  

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Part Number: IRF1607

 

MFG: IR

Package Cooled: TO-220

D/C: 06+

Description: Specifically designed for Automotive applications, this Stripe Planar design of HEXFET Power MOSFETs u...


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IRF1607 General Description


Specifically designed for Automotive applications, this Stripe Planar design of HEXFET Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175!a junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

IRF1607 Maximum Ratings

  Parameter Max. Units
ID @ TC =25 Continuous Drain Current,VGS @ 10V 142 A
ID @ TC =100 Continuous Drain Current,VGS @ 10V 100
IDM Pulsed Drain Current 570
PD @ TC =25 Power Dissipation 380 W
  Linear Derating Factor 2.5 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 1250 mJ
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy mJ
dv/dt Peak Diode Recovery dv/dt 5.2 V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case)
  Mounting Torque, 6-32 or M3 screw 10 lbf.in (1.1 N.m)  

IRF1607 Features

`Ultra Low On-Resistance
`Dynamic dv/dt Rating
`175 Operating Temperatur
`Fast Switching
`Repetitive Avalanche Allowed up to Tjmax
`Automotive [Q101] Qualified

IRF1607 Typical Application

·42 Volts Automotive Electrical Systems
·Electrical Power Steering (EPS)
·Integrated Starter Alternator

IRF1607 datasheet

IRF1607
PDF/DataSheet Download

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