MFG:IR Package Cooled:TO-220 D/C:07+
MFG: IR
Package Cooled: TO-220
D/C: 07+
Description: Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSF...
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
|
Characteristics |
PARAMETER |
Max. |
Unit |
| Continuous Drain Current, VGS @ 10V |
ID @ TA = 25°C |
142 |
A |
| Continuous Drain Current, VGS @ 10V |
ID @ TA = 70°C |
100 |
A |
| Pulsed Drain Current |
IDM |
570 |
A |
| Power Dissipation |
PD @TC = 25°C |
380 |
W |
| Linear Derating Factor |
2.5 |
mW/ | |
| Gate-to-Source Voltage |
VGS |
± 20 |
V |
| Single Pulse Avalanche Energy |
EAS |
1250 |
mJ |
|
IAR |
See Fig.12a,12b,15,16 |
A | |
|
EAR |
mJ | ||
| Peak Diode Recovery dv/dt |
dv/dt |
5.0 |
V/ns |
| Junction and Storage Temperature Range |
Tj,Tstg |
-55~175 |
IRF034
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Specifically designed for Automotive applications, this Stripe Planar design of HEXFET Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175...
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