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IRF1902

Features: ·Ultra Low On-Resistance·N-Channel MOSFET·Surface Mount·Available in Tape & ReelSpecifications Parameter Max. Units VDS Drain-Source Voltage 20 V ID @ TA =25 Continuous Drain Current,VGS @ 4.5V 4.2 A ID @ TA =70 Continuous Drain Current,VGS @ 4.5V 3.4 IDM...

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SeekIC No. : 004376398 Detail

IRF1902: Features: ·Ultra Low On-Resistance·N-Channel MOSFET·Surface Mount·Available in Tape & ReelSpecifications Parameter Max. Units VDS Drain-Source Voltage 20 V ID @ TA =25 Continu...

IRF1902 Data Sheet

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Part Number:
IRF1902
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

·Ultra Low On-Resistance
·N-Channel MOSFET
·Surface Mount
·Available in Tape & Reel


Specifications

  Parameter Max. Units
VDS Drain-Source Voltage 20 V
ID @ TA =25 Continuous Drain Current,VGS @ 4.5V 4.2 A
ID @ TA =70 Continuous Drain Current,VGS @ 4.5V 3.4
IDM Pulsed Drain Current 17
PD @ TA =25 Maximum Power Dissipation 2.5 W
PD @ TA =70 Maximum Power Dissipation 1.6
  Linear Derating Factor 0.05 mW/
VGS Gate-to-Source Voltage ±12 V
TJ
TSTG		 Operating and Junction
Storage Temperature Range		 -55 to + 150



Description

These N-Channel HEXFET  power MOSFETs of the IRF1902 from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.  This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

The SO-8 of the IRF1902 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.  With these improvements, multiple devices can be used in an application with dramatically reduced board space.  The package is designed for vapor phase, infrared, or wave soldering techniques.




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