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MFG:IOR  Package Cooled:SMD-8  

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Part Number: IRF1902

 

MFG: IOR

Package Cooled: SMD-8

 

Description: These N-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing te...


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IRF1902 General Description


These N-Channel HEXFET  power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.  This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.  With these improvements, multiple devices can be used in an application with dramatically reduced board space.  The package is designed for vapor phase, infrared, or wave soldering techniques.

IRF1902 Maximum Ratings

  Parameter Max. Units
VDS Drain-Source Voltage 20 V
ID @ TA =25 Continuous Drain Current,VGS @ 4.5V 4.2 A
ID @ TA =70 Continuous Drain Current,VGS @ 4.5V 3.4
IDM Pulsed Drain Current 17
PD @ TA =25 Maximum Power Dissipation 2.5 W
PD @ TA =70 Maximum Power Dissipation 1.6
  Linear Derating Factor 0.05 mW/
VGS Gate-to-Source Voltage ±12 V
TJ
TSTG		 Operating and Junction
Storage Temperature Range		 -55 to + 150

IRF1902 Features

·Ultra Low On-Resistance
·N-Channel MOSFET
·Surface Mount
·Available in Tape & Reel

IRF1902 datasheet

IRF1902
PDF/DataSheet Download

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