MFG:International Rectifier Category:Discrete Semiconductor Products
Category: Discrete Semiconductor Products
MFG: International Rectifier
Descriptions: MOSFET N-CH 20V 4.2A 8-SOIC
4000
.25245
1009.80
The IRF1902TRPBF is designed as one kind of N-channel HEXFET power MOSFETs from international rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area that provides the designer with an extremely efficient device for use in battery and load mana-gement applications.Features of the IRF1902TRPBF are four points:ultra low on-resistance,N-channel MOSFET,surface mount and available in tape & reel.
The absolute maximum ratings of the IRF1902TRPBF can be summarized as:(1)drain-source voltage:20 V;(2)continuous drain current,VGS @ 4.5V(ID @ TA=25°C):4.2 A;(3)continuous drain current,VGS @ 4.5V(ID @ TA=70°C):3.4 A;(4)pulsed drain current:17 A;(5)power dissipation(PD @TA=25°C):2.5 W;(6)power dissipation(PD @TA=70°C):1.6 W;(7)linear derating factor:0.02 mW/°C;(8)gate-to-source voltage:±12 V;(9)junction and storage temperature range:-55 to +150 °C.If you want to know more information such as the electrical characteristics about the IRF1902TRPBF,please download the datasheet in www.seekic.com or www.chinaicmart.com .
| Technical/Catalog Information | IRF1902TRPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 4.2A |
| Rds On (Max) @ Id, Vgs | 85 mOhm @ 4A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 310pF @ 15V |
| Power - Max | 2.5W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 7.5nC @ 4.5V |
| Package / Case | SO-8 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF1902TRPBF IRF1902TRPBF |
IRF034
PDF/DataSheet Download
These N-Channel HEXFET® power MOSFETs of the IRF1902PbFfrom International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device ...
These N-Channel HEXFET power MOSFETs of the IRF1902from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use ...
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