IRF1902TRPBF

Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Gate-Source Breakdown Voltage : 12 V
Drain-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Resistance Drain-Source RDS (on) : 85 mOhms
Continuous Drain Current : 4.2 A


Pinout




Description

The IRF1902TRPBF is designed as one kind of N-channel HEXFET power MOSFETs from international rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area that provides the designer with an extremely efficient device for use in battery and load mana-gement applications.Features of the IRF1902TRPBF are four points:ultra low on-resistance,N-channel MOSFET,surface mount and available in tape & reel.

The absolute maximum ratings of the IRF1902TRPBF can be summarized as:(1)drain-source voltage:20 V;(2)continuous drain current,VGS @ 4.5V(ID @ TA=25°C):4.2 A;(3)continuous drain current,VGS @ 4.5V(ID @ TA=70°C):3.4 A;(4)pulsed drain current:17 A;(5)power dissipation(PD @TA=25°C):2.5 W;(6)power dissipation(PD @TA=70°C):1.6 W;(7)linear derating factor:0.02 mW/°C;(8)gate-to-source voltage:±12 V;(9)junction and storage temperature range:-55 to +150 °C.If you want to know more information such as the electrical characteristics about the IRF1902TRPBF,please download the datasheet in www.seekic.com or www.chinaicmart.com .

Parameters:

Technical/Catalog Information	IRF1902TRPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	4.2A
Rds On (Max) @ Id, Vgs	85 mOhm @ 4A, 4.5V
Input Capacitance (Ciss) @ Vds	310pF @ 15V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	7.5nC @ 4.5V
Package / Case	SO-8
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF1902TRPBF IRF1902TRPBF