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MFG:IR Package Cooled:TO-3


Part Number: IRF220
MFG: IR
Package Cooled: TO-3
Description: These are N-Channel enhancement mode silicon gate power ?eld effect transistors. They are advanced pow...
MFG:IR Package Cooled:TO-3


MFG: IR
Package Cooled: TO-3
Description: These are N-Channel enhancement mode silicon gate power ?eld effect transistors. They are advanced pow...
These are N-Channel enhancement mode silicon gate power ?eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci?ed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching conver- tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA09600.
| IRF220 | IRF221 | IRF222 | IRF223 | UNITS | ||
| Drain to Source Voltage (Note 1) | VDS | 200 | 150 | 200 | 150 | V |
| Drain to Gate Voltage (RGS = 20k)(Note 1) |
VDGR | 200 | 150 | 200 | 150 | V |
| Continuous Drain Current | ID | 5.0 | 5.0 | 4.0 | 4.0 | A |
| TC = 100 |
ID | 3.0 | 3.0 | 2.5 | 2.5 | A |
| Pulsed Drain Current (Note 3) | IDM | 20 | 20 | 16 | 16 | A |
| Gate to Source Voltage. | VGS | ±20 | ±20 | ±20 | ±20 | V |
| Maximum Power Dissipation | PD | 40 | 40 | 40 | 40 | W |
| Linear Derating Factor | 0.32 |
0.32 |
0.32 | 0.32 | W/ | |
| Single Pulse Avalanche Energy Rating (Note 4) | EAS | 85 | 85 | 85 | 85 | mJ |
| Operating and Storage Temperature | TJ , TSTG | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | |
| Maximum Temperature for Soldering | ||||||
| Leads at 0.063in (1.6mm) from case for 10s | TL | 300 | 300 | 300 | 300 | |
| Package Body for 10s, see TB334 | Tpkg | 260 | 260 | 260 | 260 |
IRF220
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