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MFG:IR  Package Cooled:TO-3  

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Part Number: IRF220

 

MFG: IR

Package Cooled: TO-3

 

Description: These are N-Channel enhancement mode silicon gate power ?eld effect transistors. They are advanced pow...


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IRF220 General Description


These are N-Channel enhancement mode silicon gate power ?eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci?ed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching conver- tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly developmental type TA09600.

IRF220 Maximum Ratings

    IRF220 IRF221 IRF222 IRF223 UNITS
Drain to Source Voltage (Note 1) VDS 200 150 200 150 V
Drain to Gate Voltage (RGS = 20k)(Note 1)
VDGR 200 150 200 150 V
Continuous Drain Current ID 5.0 5.0 4.0 4.0 A
TC = 100
ID 3.0 3.0 2.5 2.5 A
Pulsed Drain Current (Note 3) IDM 20 20 16 16 A
Gate to Source Voltage. VGS ±20 ±20 ±20 ±20 V
Maximum Power Dissipation PD 40 40 40 40 W
Linear Derating Factor   0.32

0.32

0.32 0.32 W/
Single Pulse Avalanche Energy Rating (Note 4) EAS 85 85 85 85 mJ
Operating and Storage Temperature TJ , TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150
Maximum Temperature for Soldering            
Leads at 0.063in (1.6mm) from case for 10s TL 300 300 300 300
Package Body for 10s, see TB334 Tpkg 260 260 260 260

IRF220 Features

`4.0A and 5.0A, 150V and 200V
`rDS(ON)= 0.8 and 1.2
`SOA is Power Dissipation Limited
`Nanosecond Switching Speeds
`Linear Transfer Characteristics
`High Input Impedance
`Majority Carrier Device
`Related Literature
-TB334  Guidelines for Soldering Surface Moun Components to PC Boards

IRF220 datasheet

IRF220
PDF/DataSheet Download

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