MFG:IR Package Cooled:TO-220 D/C:08+
MFG: IR
Package Cooled: TO-220
D/C: 08+
Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the lastest ...
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
| Parameter | Max. | Units | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V | 210 | A |
| ID @ TC = 100 | Continuous Drain Current, VGS @ 10V | 150 | |
| IDM | Pulsed Drain Current | 850 | |
| PD @ TC = 25 | Power Dissipation | 330 | W |
| Linear Derating Factor | 2.2 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 460 | mJ |
| IAR | Avalanche Current | See Fig.12a, 12b, 15, 16 | A |
| EAR | Repetitive Avalanche Energy | mJ | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting Torque, 6-32 or M3 screw | 10 lbf•in (1.1N•m) |
IRF2204
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