Purchase IRF3707ZS, In-stock IRF3707ZS From SeekIC.
MFG:IR Package Cooled:D2-PAK D/C:09+
- Table of contents:
IRF3707ZS
-
Suppliers
DataSheet
General Description
IRF3707ZS Maximum Ratings
|
Parameter |
Max. |
Units | |
| VDS | Drain-Source Voltage |
30 |
V |
| VGS | Gate-to-Source Voltage |
± 20 | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V |
59 |
A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V |
42 | |
| IDM | Pulsed Drain Current |
230 | |
| PD @TC = 25°C | Maximum Power Dissipation |
57 |
W
|
| PD @TC =100°C | Maximum Power Dissipation |
28 | |
| Linear Derating Factor |
0.38 |
W/°C | |
|
TJ TSTG |
Operating Junction and |
-55 to + 175 |
°C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case) | ||
| Mounting torque, 6-32 or M3 screw | 10 lbf`in (1.1 N`m) |
IRF3707ZS Typical Application
· High Frequency Synchronous Buck Converters for Computer Processor Power
IRF3707ZS
PDF/DataSheet Download
- Datasheet: IRF3707ZS
- File Size: 414096 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
- ·IRF034
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 147521 KB
- ·IRF044
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 22513 KB
- ·IRF044SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 21905 KB
- ·IRF054
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 149688 KB
- ·IRF054SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 23141 KB
- ·IRF100
- ETC [ETC]
- 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
- 86902 KB
- ·IRF101
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Power MOSFETs, 27 A, 60-100V
- 149859 KB
- ·IRF1010E
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A
- 200209 KB
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