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IRF3805S-7P

MOSFET N-CH 55V 160A D2PAK7

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SeekIC No. : 004376480 Detail

IRF3805S-7P: MOSFET N-CH 55V 160A D2PAK7

IRF3805S-7P Data Sheet

floor Price/Ceiling Price

US $ 2.65~2.65 / Piece | Get Latest Price
Part Number:
IRF3805S-7P
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~100
  • Unit Price
  • $2.65
  • Processing time
  • 15 Days
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Product Details

Description



Features:

` Advanced Process Technology
` Ultra Low On-Resistance
` 175 Operating Temperature
` Fast Switching
` Repetitive Avalanche Allowed up to Tjmax


Specifications

  Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V(Silicon Limited) 240 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V(See Fig. 9) 170
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Package Limited) 160
IDM Pulsed Drain Current 1000
PD @ TC = 25 Max. Power Dissipation 300 W
  Linear Derating Factor 2.0 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) 440 mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value 680
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy mJ
TJ
TSTG		 Operating Junction
Storage Temperature Range		 -55 to 175
  Soldering Temperature, for 10 seconds 300 (1.6 mm from case)
  Mounting torque, 6-32 or M3 screw 10 lbf`in (1`1N?m)  
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11).
 Limited by TJmax, starting TJ = 25, L=0.043mH, RG = 25, IAS = 140A, VGS =10V.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population. 100% tested to this value in production.


Description

Specifically designed for Automotive applications of the IRF3805S-7P, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of the IRF3805S-7P combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




Parameters:

Technical/Catalog InformationIRF3805S-7P
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C160A
Rds On (Max) @ Id, Vgs2.6 mOhm @ 140A, 10V
Input Capacitance (Ciss) @ Vds 7960pF @ 25V
Power - Max330W
PackagingBulk
Gate Charge (Qg) @ Vgs290nC @ 10V
Package / CaseD²Pak, TO-263 (7 leads + tab)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRF3805S 7P
IRF3805S7P



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