IRF4104, US $ 1.1-1.1, IRF4104 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 003432468 Detail

IRF4104: MOSFET N-CH 40V 75A TO-220AB

IRF4104 Data Sheet

US $ 1.1~1.1 / Piece | Get Latest Price

Part Number:: IRF4104
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Supply Ability:: 5000

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Upload time: 2024/4/25

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US $.8 - 1.82 / Piece

MOSFET

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Series:	HEXFET®	Manufacturer:	International Rectifier
FET Type:	MOSFET N-Channel, Metal Oxide	Transistor Type:	-
Gain :	19.5 dB	Current - Collector (Ic) (Max):	-
FET Feature:	Standard	Drain to Source Voltage (Vdss):	40V
Voltage - Collector Emitter Breakdown (Max):	-	Current - Continuous Drain (Id) @ 25° C:	75A
Vce Saturation (Max) @ Ib, Ic:	-	Current - Collector Cutoff (Max):	-
Rds On (Max) @ Id, Vgs:	5.5 mOhm @ 75A, 10V	DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Vgs(th) (Max) @ Id:	4V @ 250µA	Gate Charge (Qg) @ Vgs:	100nC @ 10V
Frequency - Transition:	-	Input Capacitance (Ciss) @ Vds:	3000pF @ 25V
Power - Max:	140W	Mounting Type:	Through Hole
Package / Case:	TO-220-3	Supplier Device Package:	TO-220AB

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 100nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Current - Continuous Drain (Id) @ 25° C: 75A
Manufacturer: International Rectifier
Power - Max: 140W
Input Capacitance (Ciss) @ Vds: 3000pF @ 25V
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 75A, 10V

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IRF4104

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