Features: ` Exceeds IEEE 802.3af PoE requirements` Rugged planar technology with large SOA` Very Low Leakage at 100V (1.5A max)` Fully characterized avalanche voltage and current` Thermally enhanced` Saves space: replaces 4 discrete MOSFETsApplication· IEEE 802.3af Compliant PoE Switch in Power So...
IRF4000: Features: ` Exceeds IEEE 802.3af PoE requirements` Rugged planar technology with large SOA` Very Low Leakage at 100V (1.5A max)` Fully characterized avalanche voltage and current` Thermally enhanced...
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| Parameter | Max. | Units | |
| VDS | Drain-to-Source Voltage | 100 | V |
| VGS | Gate-to-Source Voltage | ± 30 | |
| ID @ TA = 25 | Continuous Drain Current, VGS @ 10V | 2.4 | A |
| ID @ TA = 70 | Continuous Drain Current, VGS @ 10V | 1.9 | |
| IDM | Pulsed Drain Current | 19 | |
| PD @TA = 25 | Maximum Power Dissipation | 3.5 | W |
| Linear Derating Factor | 0.028 | W/ | |
| dv/dt | Peak Diode Recovery dv/dt | 8.6 | V/ns |
| TJ,TSTG | Operating Junction andStorage Temperature Range | -55 to + 150 |