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IRF520

MOSFET N-Chan 100V 9.2 Amp

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SeekIC No. : 00158876 Detail

IRF520: MOSFET N-Chan 100V 9.2 Amp

IRF520 Data Sheet

floor Price/Ceiling Price

US $ .97~1.05 / Piece | Get Latest Price
Part Number:
IRF520
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~720
  • 720~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $1.05
  • $1.01
  • $.98
  • $.97
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/16

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 9.2 A
Resistance Drain-Source RDS (on) : 0.27 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 9.2 A
Resistance Drain-Source RDS (on) : 0.27 Ohms


Application

·HIGHCURRENT, HIGHSPEEDSWITCHING
·SOLENOIDAND RELAYDRIVERS
·REGULATORS
·DC-DC &DC-AC CONVERTERS
·MOTORCONTROL, AUDIOAMPLIFIERS
·AUTOMOTIVE ENVIRONMENT (INJECTION,ABS,AIR-BAG, LAMPDRIVERS,Etc.)


Specifications

Symbol Parameter Value Unit
IRF520 IRF520FI
VDS Drain-source Voltage (VGS =0) 100  V
VDGR Drain- gate Voltage (RGS =20k) 100  V
VGS Gate-source Voltage ± 20  V
ID
Drain Current (cont.) at Tc =25 		10 7  A
ID
Drain Current (cont.) at Tc =100		 7 5  A
IDM() Drain Current (pulsed) 40 40  A
Ptot
Total Dissipation at Tc =25		 70 35  W
  Derating Factor 0.47 0.23
W/
VISO Insulation Withstand Voltage (DC) - 2000 V
Tstg Storage Temperature -65 to 175  
Tj Max. Operating Junction Temperature 175  



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