Purchase IRF520VS, In-stock IRF520VS From SeekIC.
MFG:IR Package Cooled:D2-PAK D/C:09+
Part Number: IRF520VS
MFG: IR
Package Cooled: D2-PAK
D/C: 09+
Description: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced proc...
- Table of contents:
IRF520VS
-
Suppliers
DataSheet
General Description
IRF520VS General Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2 Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D 2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF520VL) is available for low-profile applications.
IRF520VS Maximum Ratings
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | -40 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | -29 | |
| IDM | Pulsed Drain Current | -140 | |
| PD @TC = 25°C | Power Dissipation | 200 | W |
| Linear Derating Factor | 1.3 | W/°C | |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| IAR | Avalanche Current | 9.2 | A |
| EAR | Repetitive Avalanche Energy | 4.4 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 7.0 | V/ns |
| T J TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
IRF520VS Features
· Advanced Process Technology
·Ultra Low On-Resistance
·Dynamic dv/dt Rating
·175°C Operating Temperature
·Fast Switching
·Fully Avalanche Rated
·Optimized for SMPS Applications
·Ultra Low On-Resistance
·Dynamic dv/dt Rating
·175°C Operating Temperature
·Fast Switching
·Fully Avalanche Rated
·Optimized for SMPS Applications
IRF520VS
PDF/DataSheet Download
- Datasheet: IRF520VS
- File Size: 132185 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
- ·IRF034
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 147521 KB
- ·IRF044
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 22513 KB
- ·IRF044SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 21905 KB
- ·IRF054
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 149688 KB
- ·IRF054SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 23141 KB
- ·IRF100
- ETC [ETC]
- 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
- 86902 KB
- ·IRF101
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Power MOSFETs, 27 A, 60-100V
- 149859 KB
- ·IRF1010E
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A
- 200209 KB
IRF520VS Relative Products
IRF520VPbF
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF520VPbF, combined with the fast switching speed and ruggedized device design th...
IRF520VL
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF520VL, combined with the fast switching speed and ruggedized device design that...
IRF520V
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF520V, combined with the fast switching speed and ruggedized device design that ...
IRF520S, SiHF520S
Power MOSFET IRF520S, SiHF520S
IRF520NSTRRPBF
MOSFET N-CH 100V 9.7A D2PAK
-
IRF520NSTRR
MOSFET N-CH 100V 9.7A D2PAK
Hotspot Suppliers Product
MAX713ESE
Price: 0.1-50 USD
NiCd/NiMH Battery Fast-Charge Controller, 16-SO, 5V Shunt Regulator Powers External Logic
ITS428L2
Price: 1.48-2 USD
High-Side Power Switch, PG-TO2, 60mΩ
TRF3761-EIRHAR
Price: 4.75-6.5 USD
integer-N PLL, QFN, –0.3 to 5.5 V, 10MHz to 104MHz, TRF3761-EIRHAR
2SC3478
Price: 1-2 USD
2SC3478 NPN SILICON TRANSISTORS - NEC
D71055C
Price: 0.1-0.5 USD
CMOS programmable, parallel interface unit, DIP, 500mW, -0.5V to +7.0V
EPC2TC32(N)
Price: 1-2 USD
FPGA, 1.6Mbit, 32-TQFP, Low current during configuration, near-zero standby current
PCA82C251T
Price: 0.8-1 USD
CAN transceiver, for 24 V systems, -0.3 to +7.0 V, High speed, Thermally protected
LCMX0640-4F7256C-3I
Price: 0.5-2 USD
complex programmable logic device, BGA, 6.0Kbits, -0.5V to 3.75V
NY24W-K
Price: 1.8-3 USD
power relay, 1 POLE, 5 A, NY series, 30 mW Resistance, 5 A Maximum Carrying Current, 0.12W
LM399H
Price: 6-6.5 USD
reference, 40V, 1mA
XTR115UA
Price: 1.5-1.6 USD
4mA to 20mA, current loop transmitter, low quiescent current, low span error, SOIC8
AC826M45
Price: 1-2 USD
BGA, Integrated Circuits, Intel Corporation, AC826M45
