Purchase IRF520VSPbF, In-stock IRF520VSPbF From SeekIC.
Part Number: IRF520VSPbF
Description: Advanced HEXFET® Power MOSFETs from International Rectifierutilize advanced processing techniques ...
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IRF520VSPbF
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DataSheet
General Description
IRF520VSPbF General Description
Advanced HEXFET® Power MOSFETs from International Rectifierutilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF520VL) is available for low-profile applications.
IRF520VSPbF Maximum Ratings
| Parameter | Max. | Units | |
| ID @ TA=25 | Continuous Drain Current, VGS @ 10V | 9.6 | A |
| ID @ TC=70 | Continuous Drain Current, VGS @ 10V | 6.8 | A |
| IDM | Pulsed Drain Current | 37 | A |
| PD @ TC=25 | Power Dissipation | 44 | W |
| Linear Derating Factor | 0.29 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| IAR | Avalanche Current | 9.2 | A |
| EAR | Repetitive Avalanche Energy | 4.4 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 7.0 | V/ns |
| Tj | Operating Junction and | -55 to +175 | |
| TSTG | Storage Temperature Range Soldering Temperature, for 10 seconds |
-55 to +175 |
|
| Mounting torque, 6-32 or M3 srew | 300 (1.6mm from case ) |
IRF520VSPbF Features
·Advanced Process Technology
·Ultra Low On-Resistance
·Dynamic dv/dt Rating
·175°C Operating Temperature
·Fast Switching
·Fully Avalanche Rated
·Optimized for SMPS Applications
·Lead-Free
·Ultra Low On-Resistance
·Dynamic dv/dt Rating
·175°C Operating Temperature
·Fast Switching
·Fully Avalanche Rated
·Optimized for SMPS Applications
·Lead-Free
IRF034
PDF/DataSheet Download
- Datasheet: IRF034
- File Size: 147521 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
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Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF520VS, combined with the fast switching speed and ruggedized device design that...
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Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF520VPbF, combined with the fast switching speed and ruggedized device design th...
IRF520VL
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF520VL, combined with the fast switching speed and ruggedized device design that...
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