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IRF530N,127

MOSFET N-CH 100V 17A TO-220AB

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SeekIC No. : 003433630 Detail

IRF530N,127: MOSFET N-CH 100V 17A TO-220AB

IRF530N,127 Data Sheet

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Part Number:
IRF530N,127
Mfg:
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Series: TrenchMOS™ Manufacturer: NXP Semiconductors
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 100V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 17A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 110 mOhm @ 9A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) @ Vgs: 40nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 633pF @ 25V
Power - Max: 79W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: TO-220AB    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Gate Charge (Qg) @ Vgs: 40nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Current - Continuous Drain (Id) @ 25° C: 17A
Series: TrenchMOS™
Manufacturer: NXP Semiconductors
Vgs(th) (Max) @ Id: 4V @ 1mA
Input Capacitance (Ciss) @ Vds: 633pF @ 25V
Power - Max: 79W
Rds On (Max) @ Id, Vgs: 110 mOhm @ 9A, 10V


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