MOSFET
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
| Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 17 A | ||
| Resistance Drain-Source RDS (on) : | 90 m Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | D2PAK | Packaging : | Tube |
|
Symbol |
Parameter |
Max. |
Units |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V |
17 |
A |
| ID @ TC =100 | Continuous Drain Current, VGS @ 10V |
12 | |
| IDM | Pulsed Drain Current |
60 | |
| PD @TA= 25 | Power Dissipation |
3.8 |
W |
| PD @TC= 25 | Power Dissipation |
70 |
W |
| Linear Derating Factor |
0.47 |
W/ | |
| VGS | Gate-to-Source Voltage |
± 20 |
V |
| IAR | Avalanche Current |
9.0 |
A |
| EAR | Repetitive Avalanche Energy |
7.0 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt |
7.4 |
V/ns |
|
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
|
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
| Technical/Catalog Information | IRF530NSPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 17A |
| Rds On (Max) @ Id, Vgs | 90 mOhm @ 9A, 10V |
| Input Capacitance (Ciss) @ Vds | 1200pF @ 25V |
| Power - Max | 70W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 37nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF530NSPBF IRF530NSPBF |