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MFG:N/A  Package Cooled:IR  D/C:06+  

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Part Number: IRF540ZPbF

 

MFG: N/A

Package Cooled: IR

D/C: 06+

Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes t...


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IRF540ZPbF General Description


Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

IRF540ZPbF Maximum Ratings

Parameter
Max.
Units
ID @ TC = 25
Continuous Drain Current VGS@ 10V (Silicon Limited)
36
A
ID @ TC = 100
Continuous Drain Current, VGS@10V
25
IDM
Pulsed Drain Current
140
PD @ TC = 25
Maximum Power Dissipation
92
W
Linear Derating Factor
0.61
W/
VGS
Gate-to-Source Voltage
±20
V
EAS (Thermally limited)
Single Pulse Avalanche Energy
83
mJ
EAS (Tested)
Single Pulse Avalanche Energy Tested Value
120
IAR
Avalanche Current
See Fig.12a,12b,15,16
A
EAR
Repetitive Avalanche Energy
mJ
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
  Mounting Torque, 6-32 or M3 screw
10 lbfin (1.1Nm)


IRF540ZPbF Features

` Advanced Process Technology
` Ultra Low On-Resistance
` 175 Operating Temperature
` Fast Switching
` Repetitive Avalanche Allowed up to Tjmax
` Lead-Free

IRF540ZPbF datasheet

IRF034
PDF/DataSheet Download

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