MFG:IR Package Cooled:D2-Pak D/C:09+
MFG: IR
Package Cooled: D2-Pak
D/C: 09+
Description: Specifically designed for Automotive applications, ID = 36A this HEXFET® Power MOSFET u...
Specifically designed for Automotive applications, ID = 36A this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
|
Parameter |
Max. |
Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Silicon Limited) |
36 |
A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V |
25 | |
| IDM | Pulsed Drain Current |
140 | |
| PD @TC = 25°C | Power Dissipation |
92 |
W |
| Linear Derating Factor |
0.61 |
W/°C | |
| VGS | Gate-to-Source Voltage |
± 20 |
V |
| EAS (Thermally limited) | Single Pulse Avalanche Energy |
83 |
mJ |
| EAS (Tested ) | Single Pulse Avalanche Energy Tested Value |
120 | |
| IAR | Avalanche Current |
See Fig.12a, 12b, 15, 16
|
A |
| EAR | Repetitive Avalanche Energy |
mJ | |
|
TJ |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
°C |
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) | ||
| Mounting torque, 6-32 or M3 srew |
10 lbf`in (1.1N`m) |
IRF540ZS
PDF/DataSheet Download
Specifically designed for Automotive applications IRF540ZPbF, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175 junction operating temp...
Specifically designed for Automotive applications IRF540ZLPbF, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175 junction operating tem...
Specifically designed for Automotive applications IRF540ZL, ID = 36A this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction opera...
Specifically designed for Automotive applications, ID = 36A this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design of IRF540Z are a 175°C junction ope...
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