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IRF550A

MOSFET 100V N-Channel A-FET

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SeekIC No. : 00160475 Detail

IRF550A: MOSFET 100V N-Channel A-FET

IRF550A Data Sheet

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Part Number:
IRF550A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 40 A
Resistance Drain-Source RDS (on) : 0.04 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 40 A
Resistance Drain-Source RDS (on) : 0.04 Ohms


Features:

·Avalanche Rugged Technology
·Rugged Gate Oxide Technology
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
·175 Operating Temperature
·Lower Leakage Current : 10 A (Max.) @ VDS = 100V
·Lower RDS(ON) : 0.032 (Typ.)


Specifications

Symbol
Characteristic
Value
Units
VDSS
 Drain-to-Source Voltage
100
V
ID
 Continuous Drain Current (TC=25 )
40
A
Continuous Drain Current (TC=100 )
28.3
IDM
 Drain Current-Pulsed
160
A
VGS
 Gate-to-Source Voltage
+_ 0
V
EAS
 Single Pulsed Avalanche Energy
640
mJ
IAR
 Avalanche Current
40
A
EAR
 Repetitive Avalanche Energy
16.7
mJ
dv/dt
 Peak Diode Recovery dv/dt
6.5
V/ns
PD
 Total Power Dissipation (TC=25 )
Linear Derating Factor
167
1.11
W
W/°C
TJ , TSTG
 Operating Junction and
Storage Temperature Range
- 55 to +175
°C
TL
 Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds
300



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