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Part Number: IRF5800PbF

 

 

 

 

Description: These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve...


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IRF5800PbF General Description


These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

The TSOP-6 package with its customized leadframe produces a HEXFET power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.

IRF5800PbF Maximum Ratings

  Parameter
Max.
Units
VDS Drain- Source Voltage
-30
V
ID @ TA = 25 Continuous Drain Current, VGS @ -4.5V
-4.0
A
ID @ TA= 70 Continuous Drain Current, VGS @ -4.5V
-3.2
IDM Pulsed Drain Current
-32
PD @TA = 25 Power Dissipation
2.0
W
PD @TA = 70 Power Dissipation
1.3
  Linear Derating Factor
0.016
W/
EAS Single Pulse Avalanche Energy
20.6
mJ
VGS Gate-to-Source Voltage
± 20
V
TJ, TSTG Junction and Storage Temperature Range
-55 to + 150

IRF5800PbF Features

Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
 Lead-Free

IRF5800PbF Connection Diagram

IRF5800PbF Connection Diagram

IRF5800PbF datasheet

IRF034
PDF/DataSheet Download

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