Purchase IRF5801, In-stock IRF5801 From SeekIC.
MFG:IR Package Cooled:SOT-163 D/C:07+/08+
- Table of contents:
IRF5801
-
Suppliers
DataSheet
General Description
IRF5801 Maximum Ratings
|
Parameter |
Max. |
Units | |
|
ID @ TA = 25 |
Continuous Drain Current, VGS @ 10V |
0.6 |
A |
|
ID @ TA = 70 |
Continuous Drain Current, VGS @ 10V |
0.48 | |
|
IDM |
Pulsed Drain Current |
4.8 | |
|
PD @ TC = 25 |
Power Dissipation |
2.0 |
W |
| Linear Derating Factor |
0.016 |
W/ | |
|
VGS |
Gate-to-Source Voltage |
±30 |
V |
|
dv/dt |
Peak Diode Recovery dv/dt |
9.6 |
V/ns |
|
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
|
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
IRF5801 Typical Application
· High frequency DC-DC converters
IRF5801
PDF/DataSheet Download
- Datasheet: IRF5801
- File Size: 123526 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
- ·IRF034
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 147521 KB
- ·IRF044
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 22513 KB
- ·IRF044SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 21905 KB
- ·IRF054
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 149688 KB
- ·IRF054SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 23141 KB
- ·IRF100
- ETC [ETC]
- 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
- 86902 KB
- ·IRF101
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Power MOSFETs, 27 A, 60-100V
- 149859 KB
- ·IRF1010E
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A
- 200209 KB
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