IRF5803D2TR

MOSFET P-CH 40V 3.4A 8-SOIC

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SeekIC No. : 003432027 Detail

IRF5803D2TR: MOSFET P-CH 40V 3.4A 8-SOIC

floor Price/Ceiling Price

Part Number:
IRF5803D2TR
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/19

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Product Details

Quick Details

Series: FETKY™ Manufacturer: International Rectifier
FET Type: MOSFET P-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Diode (Isolated)
Continuous Drain Current : 15 A Drain to Source Voltage (Vdss): 40V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 3.4A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 112 mOhm @ 3.4A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) @ Vgs: 37nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1110pF @ 25V
Power - Max: 2W Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO    

Description

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25° C: 3.4A
Package / Case: 8-SOIC (0.154", 3.90mm Width)
FET Feature: Diode (Isolated)
Power - Max: 2W
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 112 mOhm @ 3.4A, 10V
Gate Charge (Qg) @ Vgs: 37nC @ 10V
Input Capacitance (Ciss) @ Vds: 1110pF @ 25V
Series: FETKY™


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