Features: ·Low RDS(on)·Avalanche Energy Ratings·Dynamic dv/dt Rating·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Surface Mount·Light WeightPinoutSpecifications Parameter Units ID @ VGS = 10V, TC = 25°C Continuous Drain Current 23 A ID @ VG...
IRF5EA1310: Features: ·Low RDS(on)·Avalanche Energy Ratings·Dynamic dv/dt Rating·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Surface Mount·Light WeightPinoutSpecifications Param...
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Parameter |
Units | ||
ID @ VGS = 10V, TC = 25°C |
Continuous Drain Current |
23 |
A |
ID @ VGS = 10V, TC = 100°C |
Continuous Drain Current |
15 | |
IDM |
Pulsed Drain Current |
92 | |
PD @ TC = 25°C |
Max. Power Dissipation |
38 |
W |
Linear Derating Factor |
0.3 |
W/ | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
73 |
mJ |
IAR |
Avalanche Current |
22 |
A |
EAR |
Repetitive Avalanche Energy |
3.8 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
3.6 |
V/ns |
TJ |
Operating Junction Storage Temperature Range |
-55 to 150 |
|
Package Mounting Surface Temperature |
300 (for 5 s) | ||
Weight |
0.89 |
g |
For footnotes refer to the last page
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5EA1310, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device of IRF5EA1310 for use in a wide variety of applications.
IRF5EA1310 are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.