Features: · Low RDS(on)· Avalanche Energy Ratings· Dynamic dv/dt Rating· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Light WeightSpecifications Parameter Units ID @ VGS = -10V,TC = 25 Continuous Drain Current -31 A ID @ VGS =...
IRF5N5210: Features: · Low RDS(on)· Avalanche Energy Ratings· Dynamic dv/dt Rating· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Light WeightSpecifications ...
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| Parameter |
Units | ||
| ID @ VGS = -10V,TC = 25 | Continuous Drain Current |
-31 |
A |
| ID @ VGS = -10V,TC = 100 | Continuous Drain Current |
-19 | |
| IDM | Pulsed Drain Current |
-124 | |
| PD @TC = 25 | Max. Power Dissipation |
125 |
W |
| Linear Derating Factor |
1.0 |
W/ | |
| VGS | Gate-to-Source Voltage |
± 20 |
V |
| EAS | Single Pulse Avalanche Energy |
340 |
mJ |
| IAR | Avalanche Current |
-19 |
A |
| EAR | Repetitive Avalanche Energy |
12.5 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt |
4.0 |
V/ns |
| TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to + 150 |
|
| Lead Temperature |
300 ( for 5s) | ||
| Weight |
2.6 (Typical) |
g |