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Part Number: IRF5N5210

 

 

 

 

 

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IRF5N5210 Maximum Ratings

  Parameter  
Units
ID @ VGS = -10V,TC = 25 Continuous Drain Current
-31
A
ID @ VGS = -10V,TC = 100 Continuous Drain Current
-19
IDM Pulsed Drain Current
-124
PD @TC = 25 Max. Power Dissipation
125
W
  Linear Derating Factor
1.0
W/
VGS Gate-to-Source Voltage
± 20
V
EAS Single Pulse Avalanche Energy
340
mJ
IAR Avalanche Current
-19
A
EAR Repetitive Avalanche Energy
12.5
mJ
dv/dt Peak Diode Recovery dv/dt
4.0
V/ns
TJ,TSTG Operating Junction Storage Temperature Range
-55 to + 150
  Lead Temperature
300 ( for 5s)
  Weight
2.6 (Typical)
g

IRF5N5210 Features

· Low RDS(on)
· Avalanche Energy Ratings
· Dynamic dv/dt Rating
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Light Weight

IRF5N5210 datasheet

IRF5N5210
PDF/DataSheet Download

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