IRF6100PBF

MOSFET P-CH 20V 5.1A FLIPFET

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SeekIC No. : 003430784 Detail

IRF6100PBF: MOSFET P-CH 20V 5.1A FLIPFET

floor Price/Ceiling Price

Part Number:
IRF6100PBF
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET P-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Continuous Drain Current : 15 A Drain to Source Voltage (Vdss): 20V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 5.1A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 65 mOhm @ 5.1A, 4.5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) @ Vgs: 21nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1230pF @ 15V
Power - Max: 2.2W Mounting Type: Surface Mount
Package / Case: 4-FlipFet? Supplier Device Package: 4-FlipFet?    

Description

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Type: MOSFET P-Channel, Metal Oxide
Packaging: Tape & Reel (TR)
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 5.1A
Input Capacitance (Ciss) @ Vds: 1230pF @ 15V
Power - Max: 2.2W
Gate Charge (Qg) @ Vgs: 21nC @ 5V
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 65 mOhm @ 5.1A, 4.5V
Package / Case: 4-FlipFet?
Supplier Device Package: 4-FlipFet?


Features:

· Ultra Low RDS(on) per Footprint Area
· Low Thermal Resistance
· P-Channel MOSFET
· One-third Footprint of SOT-23
· Super Low Profile (<.8mm)
· Available Tested on Tape & Reel
· Lead-Free



Specifications

  Parameter Max. Units
VDS Drain- Source Voltage -20 V
ID @ TA = 2 Continuous Drain Current, VGS @ 4.5V ±5.1 A
ID @ TA = 70 Continuous Drain Current, VGS @ 4.5V ±3.5
IDM Pulsed Drain Current ±35
PD @TA = 25 Power Dissipation 2.2 W
PD @TA = 25 Power Dissipation 1.4
  Linear Derating Factor 17 mW/
VGS Gate-to-Source Voltage ± 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150



Description

True chip-scale packaging is available from International Rectifier IRF6100PbF. Through the use of advanced processing techniques, and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load management applications. These benefits of IRF6100PbF, combined with the ruggedized device design , that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device.

The FlipFET™ package, is one-third the footprint of a comparable SOT-23 package and has a profile of less than .8mm. Combined with the low thermal resistance of the die level device, IRF6100PbF makes the FlipFET™ the best device for application where printed circuit board space is at a premium and in extremely thin application environments such as battery packs, cell phones and PCMCIA cards.




Parameters:

Technical/Catalog InformationIRF6100PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C5.1A
Rds On (Max) @ Id, Vgs65 mOhm @ 5.1A, 4.5V
Input Capacitance (Ciss) @ Vds 1230pF @ 15V
Power - Max2.2W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs21nC @ 5V
Package / Case4-FlipFet?
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF6100PBF
IRF6100PBF



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