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IRF614B

Features: • 2.8A, 250V, RDS(on) = 2.0 @VGS = 10 V• Low gate charge ( typical 8.1 nC)• Low Crss ( typical 7.5 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter IRF610B IRFS610B Units VDSS Drain-Sourc...

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SeekIC No. : 004376577 Detail

IRF614B: Features: • 2.8A, 250V, RDS(on) = 2.0 @VGS = 10 V• Low gate charge ( typical 8.1 nC)• Low Crss ( typical 7.5 pF)• Fast switching• 100% avalanche tested• Improved ...

IRF614B Data Sheet

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Part Number:
IRF614B
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 2.8A, 250V, RDS(on) = 2.0 @VGS = 10 V
• Low gate charge ( typical 8.1 nC)
• Low Crss ( typical 7.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter IRF610B IRFS610B Units
VDSS Drain-Source Voltage 250 V
ID Drain Current - Continuous (TC = 25°C) 2.8 2.8 * A
- Continuous (TC = 100°C) 1.8 1.8* A
IDM Drain Current - Pulsed (Note 1) 8.5 8.5* A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 45 mJ
IAR Avalanche Current (Note 1) 2.8 A
EAR Repetitive Avalanche Energy (Note 1) 4.0 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C		 40 22 W
0.32 0.18 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds		 300 °C

* Drain current limited by maximum junction temperature.

 




Description

These N-Channel IRF614B enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar, DMOS technology.

This advanced technology of IRF614B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. IRF614B are well suited for high efficiency switching DC/DC converters and switch mode power supplies.

 




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