IRF630S

MOSFET N-Chan 200V 9.0 Amp

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IRF630S Picture
SeekIC No. : 00166259 Detail

IRF630S: MOSFET N-Chan 200V 9.0 Amp

floor Price/Ceiling Price

Part Number:
IRF630S
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/5/3

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.4 Ohms


Features:

TYPICAL RDS(on) = 0.35
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE



Application

·  HIGH CURRENT SWITCHING
·  UNINTERRUPTIBLE POWER SUPPLY (UPS)
·  DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.



Specifications

Symbol Parameter
Value
Unit
VDS Collector-Source Voltage (VGS = 0 V)
200
V
VDGR Drain-gate Voltage (RGS = 20 k)
200
V
VGS Gate-Source Voltage
± 20
V
ID Drain Current (continuous) at TC = 25
9
A
ID Drain Current (continuous) at TC = 100
5.7
A
IDM(`) Drain Current (pulsed)
36
A
Ptot Total Dissipation at TC = 25
70
W
Derating Factor
5.6
W/
dv/dt (1) Peak Diode Recovery voltage slope
5
V/ns
Tstg Storage Temperature
-65 to 150
Tj Max.Operating Junction Temperature
150
(•) Pulse width limited by safe operating area
( 1) ISD 9A, di/dt   300 A/s, VDD  V(BR)DSS, Tj TJMAX



Description

This power MOSFET of the IRF630S is designed using the company's consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.




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