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MFG:IR  Package Cooled:D2-PAK  D/C:09+  

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Part Number: IRF630S

 

MFG: IR

Package Cooled: D2-PAK

D/C: 09+

Description: This power MOSFET is designed using the company's consolidated strip layout-based MESH OVERLAY™ ...


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IRF630S General Description


This power MOSFET is designed using the company's consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.

IRF630S Maximum Ratings

Symbol Parameter
Value
Unit
VDS Collector-Source Voltage (VGS = 0 V)
200
V
VDGR Drain-gate Voltage (RGS = 20 k)
200
V
VGS Gate-Source Voltage
± 20
V
ID Drain Current (continuous) at TC = 25
9
A
ID Drain Current (continuous) at TC = 100
5.7
A
IDM(`) Drain Current (pulsed)
36
A
Ptot Total Dissipation at TC = 25
70
W
Derating Factor
5.6
W/
dv/dt (1) Peak Diode Recovery voltage slope
5
 V/ns
Tstg Storage Temperature
-65 to 150
Tj Max.Operating Junction Temperature
150
(•) Pulse width limited by safe operating area
( 1) ISD 9A, di/dt   300 A/s, VDD  V(BR)DSS, Tj TJMAX

IRF630S Features

`  TYPICAL RDS(on) = 0.35
`  EXTREMELY HIGH dv/dt CAPABILITY
`  100% AVALANCHE TESTED
`  VERY LOW INTRINSIC CAPACITANCES
`  GATE CHARGE MINIMIZED
`  FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE

IRF630S Typical Application

·  HIGH CURRENT SWITCHING
·  UNINTERRUPTIBLE POWER SUPPLY (UPS)
·  DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.

IRF630S datasheet

IRF630S
PDF/DataSheet Download

  • Datasheet: IRF630S
  • File Size: 87275 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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