MOSFET N-Chan 200V 9.0 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 9 A | ||
Resistance Drain-Source RDS (on) : | 0.4 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | D2PAK | Packaging : | Tube |
Symbol | Parameter |
Value |
Unit |
VDS | Collector-Source Voltage (VGS = 0 V) |
200 |
V |
VDGR | Drain-gate Voltage (RGS = 20 k) |
200 |
V |
VGS | Gate-Source Voltage |
± 20 |
V |
ID | Drain Current (continuous) at TC = 25 |
9 |
A |
ID | Drain Current (continuous) at TC = 100 |
5.7 |
A |
IDM(`) | Drain Current (pulsed) |
36 |
A |
Ptot | Total Dissipation at TC = 25 |
70 |
W |
Derating Factor |
5.6 |
W/ | |
dv/dt (1) | Peak Diode Recovery voltage slope |
5 |
V/ns |
Tstg | Storage Temperature |
-65 to 150 |
|
Tj | Max.Operating Junction Temperature |
150 |
This power MOSFET of the IRF630S is designed using the company's consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.