MOSFET N-Chan 250V 8.0 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 250 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 8.1 A | ||
Resistance Drain-Source RDS (on) : | 0.45 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Symbol | Parameter |
Value |
Unit | |
IRF634 |
IRF634FP | |||
VDS | Collector-Source Voltage (VGS = 0 V) |
250 |
V | |
VDGR | Drain-gate Voltage (RGS = 20 k) |
250 |
V | |
VGS | Gate-Source Voltage |
±20 |
V | |
ID | Drain Current (continuous) at TC = 25 |
8 |
8(*) |
A |
ID | Drain Current (continuous) at TC = 100 |
5 |
5(*) |
A |
IDM(`) | Drain Current (pulsed) |
32 |
32 |
A |
Ptot | Total Dissipation at TC = 25 |
80 |
30 |
W |
Derating Factor |
0.6 |
0.24 |
W/ | |
dv/dt (1) | Peak Diode Recovery voltage slope |
5
|
V/ns | |
VISO | Insulation Withstand Voltage (DC) |
- |
2000 |
V |
Tstg | Storage Temperature |
-60 to 150 |
||
Tj | Operating Junction Temperature |
150 |
Using the latest high voltage MESH OVERLAY™ process IRF634, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company's proprietary edge termination structure, makes it suitable in coverters for lighting applications.
Technical/Catalog Information | IRF634 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25° C | 8A |
Rds On (Max) @ Id, Vgs | 450 mOhm @ 4A, 10V |
Input Capacitance (Ciss) @ Vds | 770pF @ 25V |
Power - Max | 80W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 51.8nC @ 10V |
Package / Case | TO-220-3 (Straight Leads) |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRF634 IRF634 IRF634ST ND IRF634STND IRF634ST |