IRF634

MOSFET N-Chan 250V 8.0 Amp

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IRF634 Picture
SeekIC No. : 00158850 Detail

IRF634: MOSFET N-Chan 250V 8.0 Amp

floor Price/Ceiling Price

US $ 1.11~1.21 / Piece | Get Latest Price
Part Number:
IRF634
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~725
  • 725~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $1.21
  • $1.16
  • $1.13
  • $1.11
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 8.1 A
Resistance Drain-Source RDS (on) : 0.45 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 250 V
Continuous Drain Current : 8.1 A
Resistance Drain-Source RDS (on) : 0.45 Ohms


Features:

` TYPICAL RDS(on) = 0.38
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED





Application

` HIGH CURRENT, HIGH SPEED SWITCHING
` SWITH MODE POWER SUPPLIES (SMPS)
` DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT
` IDEAL FOR MONITOR's B+ FUNCTION





Specifications

Symbol Parameter
Value
Unit
IRF634
IRF634FP
VDS Collector-Source Voltage (VGS = 0 V)
250
V
VDGR Drain-gate Voltage (RGS = 20 k)

250

V
VGS Gate-Source Voltage
±20
V
ID Drain Current (continuous) at TC = 25
8
8(*)
A
ID Drain Current (continuous) at TC = 100
5
5(*)
A
IDM(`) Drain Current (pulsed)
32
32
A
Ptot Total Dissipation at TC = 25
80
30
W
Derating Factor
0.6
0.24
W/
dv/dt (1) Peak Diode Recovery voltage slope
5
V/ns
VISO Insulation Withstand Voltage (DC)
-
2000
V
Tstg Storage Temperature
-60 to 150
Tj Operating Junction Temperature
150
(•)Pulse width limited by safe operating area
(1) ISD8A, di/dt300 A/s, VDDV(BR)DSS, TjTjMAX
(*)Limited only by maximum temperature allowed





Description

Using the latest high voltage MESH OVERLAY™ process IRF634, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company's proprietary edge termination structure, makes it suitable in coverters for lighting applications.






Parameters:

Technical/Catalog InformationIRF634
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C8A
Rds On (Max) @ Id, Vgs450 mOhm @ 4A, 10V
Input Capacitance (Ciss) @ Vds 770pF @ 25V
Power - Max80W
PackagingTube
Gate Charge (Qg) @ Vgs51.8nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF634
IRF634
IRF634ST ND
IRF634STND
IRF634ST



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