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MFG:STMICROELECTRONICSSEMI  Package Cooled:DIP/SOP  D/C:08+  

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Part Number: IRF634

 

MFG: STMICROELECTRONICSSEMI

Package Cooled: DIP/SOP

D/C: 08+

Description: Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced...


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IRF634 General Description


Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company's proprietary edge termination structure, makes it suitable in coverters for lighting applications.

IRF634 Maximum Ratings

Symbol Parameter
Value
Unit
IRF634
IRF634FP
VDS Collector-Source Voltage (VGS = 0 V)
250
V
VDGR Drain-gate Voltage (RGS = 20 k)

250
V
VGS Gate-Source Voltage
±20
V
ID Drain Current (continuous) at TC = 25
8
8(*)
A
ID Drain Current (continuous) at TC = 100
5
5(*)
A
IDM(`) Drain Current (pulsed)
32
32
A
Ptot Total Dissipation at TC = 25
80
30
W
Derating Factor
0.6
0.24
W/
dv/dt (1) Peak Diode Recovery voltage slope
5
V/ns
VISO Insulation Withstand Voltage (DC)
-
2000
V
Tstg Storage Temperature
-60 to 150
Tj Operating Junction Temperature
150
(•)Pulse width limited by safe operating area
(1) ISD8A, di/dt300 A/s, VDDV(BR)DSS, TjTjMAX
(*)Limited only by maximum temperature allowed

IRF634 Features

` TYPICAL RDS(on) = 0.38
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED

IRF634 Typical Application

` HIGH CURRENT, HIGH SPEED SWITCHING
` SWITH MODE POWER SUPPLIES (SMPS)
` DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT
` IDEAL FOR MONITOR's B+ FUNCTION

IRF634 datasheet

IRF634
PDF/DataSheet Download

  • Datasheet: IRF634
  • File Size: 175722 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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