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MFG:TO-220AB  Package Cooled:7850  D/C:IR  

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Part Number: IRF634N

 

MFG: TO-220AB

Package Cooled: 7850

D/C: IR

Description: Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced pr...


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IRF634N General Description


Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance  throughout the industry.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection  resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF634NL) is available for lowprofile application.

IRF634N Maximum Ratings

  Parameter
Max.
Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V
8.0
A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V
5.6
IDM Pulsed Drain Current
32
PD @TC = 25 Power Dissipation
88
 
PD @TA = 25 Power Dissipation
3.8
W
  Linear Derating Factor0
0.59
W/
VGS Gate-to-Source Voltage
± 20
V
EAS Single Pulse Avalanche Energy
110
mJ
IAR Avalanche Current
4.8
A
EAR Repetitive Avalanche Energy
8.8
mJ
dv/dt Peak Diode Recovery dv/dt
7.3
V/ns
TJ,TSTG Storage Temperature Range
-55 to + 175
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )
  Mounting torque, 6-32 or M3 screw
10 lbf•in (1.1N•m)

IRF634N Features

·Advanced Process Technology
·Dynamic dv/dt Rating
·175°C Operating Temperature
·Fast Switching
·Fully Avalanche Rated
·Ease of Paralleling
·Simple Drive Requirements

IRF634N datasheet

IRF634N
PDF/DataSheet Download

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