IRF634N

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 250 V
Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 0.435 Ohms


Features:

·Advanced Process Technology
·Dynamic dv/dt Rating
·175°C Operating Temperature
·Fast Switching
·Fully Avalanche Rated
·Ease of Paralleling
·Simple Drive Requirements


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V	8.0	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V	5.6
IDM	Pulsed Drain Current	32
PD @TC = 25	Power Dissipation	88
PD @TA = 25	Power Dissipation	3.8	W
	Linear Derating Factor0	0.59	W/
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy	110	mJ
IAR	Avalanche Current	4.8	A
EAR	Repetitive Avalanche Energy	8.8	mJ
dv/dt	Peak Diode Recovery dv/dt	7.3	V/ns
TJ,TSTG	Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 screw	10 lbf•in (1.1N•m)

Description

Fifth Generation HEXFET^® Power MOSFETs IRF634N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package IRF634N is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance  throughout the industry.

The D²Pak IRF634N is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D²Pak is suitable for high current applications because of its low internal connection  resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF634NL) is available for lowprofile application.