Purchase IRF634NPbF, In-stock IRF634NPbF From SeekIC.
Part Number: IRF634NPbF
Description: Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing te...
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IRF634NPbF
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DataSheet
General Description
IRF634NPbF General Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF634NL) is available for lowprofile application.
IRF634NPbF Maximum Ratings
| Parameter | Max. | Units | |
| ID @ TC=25 | Continuous Drain Current, VGS @ 10V | 8.0 | A |
| ID @ TC=100 | Continuous Drain Current, VGS @ 10V | 5.6 | A |
| IDM | Pulsed Drain Current | 32 | A |
| PD @ TC=25 | Power Dissipation | 88 | W |
| PD @ TA=25 | Power Dissipation | 3.8 | W |
| Linear Derating Factor | 0.59 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 110 | mJ |
| IAR | Avalanche Current | 4.8 | A |
| EAR | Repetitive Avalanche Energy | 8.8 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 7.3 | V/ns |
| Tj | Operating Junction and | -55 to +175 | |
| TSTG | Storage Temperature Range Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
|
| Mounting torque, 6-32 or M3 srew | 10 lbf•in (1.1N•m) |
IRF634NPbF Features
· Advanced Process Technology
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated
· Ease of Paralleling
· Simple Drive Requirements
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated
· Ease of Paralleling
· Simple Drive Requirements
IRF034
PDF/DataSheet Download
- Datasheet: IRF034
- File Size: 147521 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
- ·IRF044
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 22513 KB
- ·IRF044SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 21905 KB
- ·IRF054
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 149688 KB
- ·IRF054SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 23141 KB
- ·IRF100
- ETC [ETC]
- 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
- 86902 KB
- ·IRF101
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Power MOSFETs, 27 A, 60-100V
- 149859 KB
- ·IRF1010E
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A
- 200209 KB
- ·IRF1010EL
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
- 126916 KB
IRF634NPbF Relative Products
IRF634NL
Fifth Generation HEXFET® Power MOSFETs IRF634NLfrom International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design ...
IRF634N
Fifth Generation HEXFET® Power MOSFETs IRF634N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design ...
IRF634FP
Using the latest high voltage MESH OVERLAY™ process IRF634FP, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company's proprietary edge termination struct...
IRF634B_FP001
MOSFET N-CH 250V 8.1A TO-220
IRF634B
These N-Channel enhancement mode power field effect transistors IRF634Bare produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology IRF634B has been especially tailored to minimize on-state resistance, provide superior switchi...
IRF634A
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