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Part Number: IRF640
Description: These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced po...


Description: These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced po...
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
| Drain to Source Breakdown Voltage (Note 1) | VDS | 200 | V |
| Drain to Gate Voltage (RGS = 20kW) (Note 1) | VDGR | 200 | V |
| Continuous Drain Current | ID | 18 | A |
| TC = 100 | ID | 11 | A |
| Pulsed Drain Current (Note 3) | IDM | 72 | A |
| Gate to Source Voltage | VGS | ±20 | V |
| Maximum Power Dissipation | PD | 125 | W |
| Dissipation Derating Factor | 1.0 | W/ | |
| Single Pulse Avalanche Energy Rating (Note 4) | EAS | 580 | mJ |
| Operating and Storage Temperature | TJ , TSTG | -55 to 150 | |
| Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See TB 334 |
TL Tpkg |
300 260 |
IRF640
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