Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Continuous Drain Current
: 18 A
Package / Case
: TO-220AB
Drain-Source Breakdown Voltage
: 200 V
Resistance Drain-Source RDS (on)
: 0.18 Ohms
Features: • 18A, 200V
• rDS(ON) = 0.180
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speed
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"Specifications
| Drain to Source Breakdown Voltage (Note 1) |
VDS |
200 |
V |
| Drain to Gate Voltage (RGS = 20kW) (Note 1) |
VDGR |
200 |
V |
| Continuous Drain Current |
ID |
18 |
A |
| TC = 100 |
ID |
11 |
A |
| Pulsed Drain Current (Note 3) |
IDM |
72 |
A |
| Gate to Source Voltage |
VGS |
±20 |
V |
| Maximum Power Dissipation |
PD |
125 |
W |
| Dissipation Derating Factor |
|
1.0 |
W/ |
| Single Pulse Avalanche Energy Rating (Note 4) |
EAS |
580 |
mJ |
| Operating and Storage Temperature |
TJ , TSTG |
-55 to 150 |
|
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s.
Package Body for 10s, See TB 334 |
TL
Tpkg |
300
260 |
|
DescriptionThese are N-Channel enhancement mode silicon gate power field effect transistors IRF640. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types IRF640 can be operated directly from integrated circuits.
Parameters: | Technical/Catalog Information | IRF640 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 18A |
| Rds On (Max) @ Id, Vgs | 180 mOhm @ 9A, 10V |
| Input Capacitance (Ciss) @ Vds | 1560pF @ 25V |
| Power - Max | 125W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 72nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF640
IRF640
497 2759 5 ND
49727595ND
497-2759-5
|
IRF640 Data Sheet
