Position: Home > Datasheet list > IRF Series > Index I > IRF640
Electronica China

Purchase IRF640, In-stock IRF640 From SeekIC.

 

IRF640 Product Image

IRF Series Datasheet download

Five Points

Part Number: IRF640

 

 

 

 

Description: These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced po...


Urgent Purchase

IRF640 General Description


These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

IRF640 Maximum Ratings

Drain to Source Breakdown Voltage (Note 1) VDS 200 V
Drain to Gate Voltage (RGS = 20kW) (Note 1) VDGR 200 V
Continuous Drain Current ID 18 A
TC = 100 ID 11 A
Pulsed Drain Current (Note 3) IDM 72 A
Gate to Source Voltage VGS ±20 V
Maximum Power Dissipation PD 125 W
Dissipation Derating Factor   1.0 W/
Single Pulse Avalanche Energy Rating (Note 4) EAS 580 mJ
Operating and Storage Temperature TJ , TSTG -55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s.
Package Body for 10s, See TB 334

TL
Tpkg

300
260


IRF640 Features

• 18A, 200V
• rDS(ON) = 0.180
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speed
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
 - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"

IRF640 datasheet

IRF640
PDF/DataSheet Download

Find IRF640 Suppliers

  • ·IRF034
  • IRF [International Rectifier] 
  • REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) 
  • 147521 KB
  • IRF034 Datasheet Download
  • ·IRF044
  • SEME-LAB [Seme LAB] 
  • N-CHANNEL POWER MOSFET 
  • 22513 KB
  • IRF044 Datasheet Download
  • ·IRF044SMD
  • SEME-LAB [Seme LAB] 
  • N-CHANNEL POWER MOSFET 
  • 21905 KB
  • IRF044SMD Datasheet Download
  • ·IRF054
  • IRF [International Rectifier] 
  • REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) 
  • 149688 KB
  • IRF054 Datasheet Download
  • ·IRF054SMD
  • SEME-LAB [Seme LAB] 
  • N-CHANNEL POWER MOSFET 
  • 23141 KB
  • IRF054SMD Datasheet Download
  • ·IRF100
  • ETC [ETC] 
  • 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED 
  • 86902 KB
  • IRF100 Datasheet Download
  • ·IRF101
  • FAIRCHILD [Fairchild Semiconductor] 
  • N-Channel Power MOSFETs, 27 A, 60-100V 
  • 149859 KB
  • IRF101 Datasheet Download
  • ·IRF1010E
  • IRF [International Rectifier] 
  • Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A 
  • 200209 KB
  • IRF1010E Datasheet Download

IRF640 Relative Products

  • IRF634S, SiHF634S

    IRF634S, SiHF634S

    Power MOSFET IRF634S, SiHF634S

  • IRF634NS

    IRF634NS

    Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEX...

  • IRF634NPbF

    IRF634NPbF

    Fifth Generation HEXFET® Power MOSFETs IRF634NPbFfrom International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig...

  • IRF634NL

    IRF634NL

    Fifth Generation HEXFET® Power MOSFETs IRF634NLfrom International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design ...

  • IRF634N

    IRF634N

    Fifth Generation HEXFET® Power MOSFETs IRF634N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design ...

  • IRF634FP

    IRF634FP

    Using the latest high voltage MESH OVERLAY™ process IRF634FP, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company's proprietary edge termination struct...

Hotspot Suppliers Product

  • Models: MC33390D
Price: 1.25-1.8 USD

    MC33390D

    Price: 1.25-1.8 USD

    Transceiver, 8-SOIC, 40V

  • Models: L7812CV
Price: 0.1-0.2 USD

    L7812CV

    Price: 0.1-0.2 USD

    three-terminal positive regulator, TO-220, 35V, 1.5A, thermal overload protection, short circuit p...

  • Models: XC6VLX130T-1FFG1156C
Price: 450-500 USD

    XC6VLX130T-1FFG1156C

    Price: 450-500 USD

    FPGA, VIRTEX 6, 128K, 1156FFGBGA, –0.5V to 1.1V, Xilinx, Inc

  • Models: HFCN-3800
Price: 0.47-0.9 USD

    HFCN-3800

    Price: 0.47-0.9 USD

    Filter, High-Pass, RoHS5

  • Models: DG190BP
Price: 18-23 USD

    DG190BP

    Price: 18-23 USD

    analog switch, CDIP-16, 36V

  • Models: TM1629B
Price: 0.15-0.25 USD

    TM1629B

    Price: 0.15-0.25 USD

    TM1629B, SMD, National Instruments

  • Models: TPS2551DBVR
Price: 0.1-0.5 USD

    TPS2551DBVR

    Price: 0.1-0.5 USD

    power-distribution switch, SOT23-6, –0.3 to 7 V, Reverse Input-Output Voltage Protection

  • Models: MRFE6S9045NR1
Price: 18-25 USD

    MRFE6S9045NR1

    Price: 18-25 USD

    RF Power Field Effect Transistor, -0.5 to +66 V, Integrated ESD Protection

  • Models: LPC2368FBD100
Price: 6.2-6.82 USD

    LPC2368FBD100

    Price: 6.2-6.82 USD

    Single-chip microcontroller, 16-bit/32-bit, real-time emulation, Advanced Vectored Interrupt Contr...

  • Models: IR2125
Price: 0.1-1 USD

    IR2125

    Price: 0.1-1 USD

    current limiting, single channel driver, DIP8, Undervoltage lockout, 500V, Floating channel

  • Models: KBU810
Price: 0.21-0.226 USD

    KBU810

    Price: 0.21-0.226 USD

    8.0 A, Silicon Bridge Rectifier, DIP, 1000V, 8.0A, KBU810, SEP

  • Models: BYG22D-TR
Price: 0.05-0.05 USD

    BYG22D-TR

    Price: 0.05-0.05 USD

    2.0A 200V, super fast silicon mesa SMD rectifier, DO-214AC

Map list:   ABCDEFGHIJKLMNOPQRSTUVWXYZ    0123456789All